Grafted GaAs detectors on lithium niobate and glass optical waveguides

Abstract

The integration of a GaAs MSM (metal-semiconductor-metal) detector with LiNbO/sub 3/ and glass optical waveguides is discussed. A 250-nm thick GaAs detector layer was fabricated using a recently reported liftoff technique and subsequently grafted onto the waveguide chip. Proof of the optical interaction between the waveguide and its grafted detector was provided by the total absorption of 633 nm of guided light within a distance of approximately 1 mm from the leading edge of the GaAs layer and by the presence of a photocurrent at the detector terminals. It is suggested that the grafting technique will prove useful in the design of new and cost-effective optoelectronic devices.