Enhancement of the donor activity of implanted selenium in GaAs by gallium implantation
- 15 February 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (4), 226-227
- https://doi.org/10.1063/1.88706
Abstract
n‐type doping levels in GaAs up to 5×1018 cm−3 have been obtained by the ion implantation of 400‐keV selenium ions at 200 °C followed by 360‐keV gallium ions at 200 °C. This is an order of magnitude above the maximum obtained from the implantation of selenium alone.Keywords
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