Electrical Properties of Germanium-Silicon Alloys

Abstract

Resistivity measurements have been performed from 300° to 800° Kelvin on homogeneous germanium-silicon alloys. The intrinsic lines for these alloys have been established. Hall and resistivity measurements have been performed on $p$-type germanium-silicon alloys from 77° to 300°K. The variation of mobility with composition of the alloy is indicative of alloy scattering.