The dissociation of dislocations in GaAs
- 1 December 1978
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 38 (6), 733-737
- https://doi.org/10.1080/01418617808239268
Abstract
Electron microscope observations have been made on α and β dislocations in GaAs. Using the weak-beam technique the dislocations have been found to be dissociated, the separation of the partials being the same for α and β dislocations. The intrinsic stacking-fault energy has been determined to be 48 ± 6 erg cm−2.Keywords
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