Negative differential resistance in InAs/GaSb single-barrier heterostructures

1 January 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (25), 1708-1709
https://doi.org/10.1049/el:19891142

Abstract

We report the first observation of negative differential resistance (NDR) at room temperature in InAs/GaSb barrier heterostructures, where the conduction band in InAs lies below the GaSb valence band.

Keywords

INAS-GASB
CONDUCTION BAND
VALENCE BAND
ROOM TEMPERATURE
SINGLE-BARRIER HETEROSTRUCTURES
NEGATIVE DIFFERENTIAL RESISTANCE
III-V SEMICONDUCTORS
P-N JUNCTIONS
NDR

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