XeCl laser ablation of polyimide: Influence of ambient atmosphere on particulate and gaseous products
- 1 October 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (7), 3324-3328
- https://doi.org/10.1063/1.344128
Abstract
The gaseous and particulate products of the XeCl (308 nm) laser ablation of polyimide (Kapton H) are quantitatively determined and compared with the mass loss of the polymer in atmospheres of He, N2, air, or O2. In air and in pure O2, the observed mass balance is about 90%, but is lower for inert atmospheres. With increasing oxygen content in the atmosphere, the yield of CO2 increases at the expense of particulates and acetylene. The influence of laser fluence and nature of the ambient atmosphere on the product distribution is interpreted in terms of ejection of small reactive species which are involved in the competitive reactions of particulate formation and oxidation to CO2.Keywords
This publication has 12 references indexed in Scilit:
- XeCl Laser Ablation Of Organic Polymers: Characterization Of Debris And Its Effect On Surface MorphologyPublished by SPIE-Intl Soc Optical Eng ,1988
- The effect of debris formation on the morphology of excimer laser ablated polymersJournal of Applied Physics, 1988
- CO2 laser cleaning of black deposits formed during the excimer laser etching of polyimide in airApplied Physics B Laser and Optics, 1988
- Clearing resist from alignment mark areas using an excimer laserJournal of Vacuum Science & Technology B, 1988
- Electrostatic collection of debris resulting from 193 nm laser etching of polyimideApplied Physics Letters, 1987
- Effect of optical pulse duration on the XeCl laser ablation of polymers and biological tissueApplied Physics Letters, 1987
- Ultraviolet laser ablation of polyimide filmsJournal of Applied Physics, 1987
- Ablation of Polymers and Biological Tissue by Ultraviolet LasersScience, 1986
- Laser ablation of polymersJournal of Vacuum Science & Technology A, 1986
- Excimer laser etching of polyimideJournal of Applied Physics, 1985