Recent results with epitaxial GaAs Gunn effect oscillators
- 1 January 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 54 (10), 1497-1498
- https://doi.org/10.1109/proc.1966.5172
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Vapor Growth Parameters and Impurity Profiles on N-Type GaAs Films Grown on N[sup +]-GaAs by the Hydrogen-Water Vapor ProcessJournal of the Electrochemical Society, 1966
- Microwave phenomena in bulk GaAsIEEE Transactions on Electron Devices, 1966
- Microwave oscillations in epitaxial layers of GaAsIEEE Transactions on Electron Devices, 1966