Field induced tunneling in Hg1−xCdxTe photodiodes
- 1 December 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (11), 1080-1082
- https://doi.org/10.1063/1.93372
Abstract
Using insulated field plates, we have observed band‐to‐band tunneling and impurity‐to‐band tunneling in ion‐implanted n+‐on‐p Hg1−xCdxTe photodiodes. The latter process results in a field‐plate‐voltage controlled negative resistance region in the forward biased I‐V characteristic. The peak and valley voltages for this excess current process are greater than those observed in Esaki type tunnel diodes.Keywords
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