Thin-film reaction between Ti and Si3N4

Abstract

The thermal reaction of Ti with Si₃N₄ was studied over the temperature range from 500 to 800 °C with Auger electron spectroscopy, Rutherford backscattering spectrometry, and transmission electron microscopy. The initial reaction consumes part of the silicon nitride and yields a two‐layer morphology of Ti(N) on top of Ti₅Si₃. As the reaction proceeds, the Ti₅Si₃ layer is converted to TiSi₂. At 800 °C, a multilayer morphology is observed containing primarily TiN and TiSi₂.