High-speed pin ultraviolet photodetectors fabricated on GaN
- 1 January 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (18), 1779-1781
- https://doi.org/10.1049/el:19981272
Abstract
The authors report very high-speed GaN-based ultraviolet photodetectors using a pin device structure. The best devices have rise times of ~90 ps and bandwidths of ~1.6 GHz at –30 V. This is the fastest speed for a GaN-based photodetector reported to date.Keywords
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