Comments on “selfheating effects in silicon resistors operated at cryogenic ambient temperatures”
- 31 March 1994
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (3), 515-516
- https://doi.org/10.1016/0038-1101(94)90019-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Selfheating effects in silicon resistors operated at cryogenic ambient temperaturesSolid-State Electronics, 1993
- Fine structure of heat flow path in semiconductor devices: A measurement and identification methodSolid-State Electronics, 1988
- New type of thermal-function i.c.: the 4-quadrant multiplierElectronics Letters, 1976
- Thermal conductivity of silicon, germanium, III–V compounds and III–V alloysSolid-State Electronics, 1967