Prediction of Kinetically Controlled Surface Roughening: A Monte Carlo Computer-Simulation Study
- 29 August 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 51 (9), 794-797
- https://doi.org/10.1103/physrevlett.51.794
Abstract
The existence of a surface roughening under far-from-equilibrium conditions is demonstrated. Roughening is critically controlled by surface kinetic processes, such as the atomic migration rate. Monte Carlo simulations are presented for a model of molecular-beam epitaxial growth of tetrahedrally bonded compound semiconductors. It is proposed that the roughening reported for GaAs/AlAs(100) growth, if intrinsic, corresponds to the kinetic surface roughening predicted here rather than that predicted by Burton, Cabrera, and Frank for surface-vapor equilibrium.Keywords
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