Implanted high value resistors
- 31 December 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (12), 1021-1027
- https://doi.org/10.1016/0038-1101(76)90183-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Buried-guarded layer ion-implanted resistorsIEEE Transactions on Electron Devices, 1973
- Electrical properties of indium implanted siliconRadiation Effects, 1971
- Electrical characteristics of ion implanted boron layers in siliconCanadian Journal of Physics, 1970
- Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling TechniqueJournal of Applied Physics, 1969
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967