Field-induced lifetime enhancement and ionization of excitons in GaAs/AlGaAs quantum wells
- 31 December 1986
- journal article
- research article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 2 (4), 309-312
- https://doi.org/10.1016/0749-6036(86)90038-8
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Electric field induced shifts and lifetimes in GaAs-GaAlAs quantum wellsApplied Physics Letters, 1985
- Transient Response of Photoluminescence for Electric Field in a GaAs/Al0.7Ga0.3As Single Quantum Well: Evidence for Field-Induced Increase in Carrier Life TimeJapanese Journal of Applied Physics, 1985
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark EffectPhysical Review Letters, 1984
- Recombination Enhancement due to Carrier Localization in Quantum Well StructuresPhysical Review Letters, 1983
- Variational calculations on a quantum well in an electric fieldPhysical Review B, 1983