C/V measurements of m.i.s. structures on n-InSb formed by room temperature reactive deposition of Si3N4

Abstract

C/V measurements were performed on Si3N4 layers on n-InSb substrates, which had been grown in an r.f. glow discharge at room temperature. Surface state densities on B-type (111) substrates were substantially larger than on A-type substrates. These structures could be biased to accumulation, to depletion, and even to inversion.