Oxidized Ta/sub 2/O/sub 5//Si/sub 3/N/sub 4/ dielectric films on poly-crystalline Si for dRAMs
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (2), 328-332
- https://doi.org/10.1109/16.19933
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Ultra-thin Ta2O5dielectric film for high-speed bipolar memoriesIEEE Transactions on Electron Devices, 1987
- Influence of SiO2 at the Ta2O5/Si interface on dielectric characteristics of Ta2O5 capacitorsJournal of Applied Physics, 1987
- Dielectric Characteristics of Double Layer Structure of Extremely Thin Ta2 O 5 / SiO2 on SiJournal of the Electrochemical Society, 1987
- A high quality high temperature compatible Tantalum oxide film for advanced dRAM applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Selective Studies of Crystalline Ta2 O 5 FilmsJournal of the Electrochemical Society, 1986
- Photo-CVD of Tantalum Oxide Film from Pentamethoxy Tantalum for VLSI Dynamic MemoriesJapanese Journal of Applied Physics, 1986
- Leakage‐Current Increase in Amorphous Ta2 O 5 Films Due to Pinhole Growth during Annealing Below 600°CJournal of the Electrochemical Society, 1983
- Quadruply self-aligned stacked high-capacitance RAM using Ta2O5high-density VLSI dynamic memoryIEEE Transactions on Electron Devices, 1982
- Novel high density, stacked capacitor MOS RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1978
- Surface Oxidation of Silicon Nitride FilmsJournal of the Electrochemical Society, 1976