In situ measurements of the Fermi level position in undoped and doped a-Si:H films
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 531-534
- https://doi.org/10.1016/0022-3093(85)90715-x
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Photovoltage profiling of hydrogenated amorphous Si solar cellsJournal of Applied Physics, 1984
- Surface states in P- and B-doped amorphous hydrogenated siliconPhysical Review B, 1983
- Growth of hydrogenated amorphous silicon due to controlled ion bombardment from a pure silane plasmaApplied Physics Letters, 1983
- The relation between contact potential and planar conduction as a-Si : H films undergo gas adsorption or temperature changesJournal de Physique, 1983