Impact of MOSFET oxide breakdown on digital circuit operation and reliability
- 11 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 553-556
- https://doi.org/10.1109/iedm.2000.904379
Abstract
We demonstrate that many gate oxide breakdowns can occur in parts of a digital circuit without affecting its overall logical function. This implies that if maintaining the circuit's logical functionality is the sufficient reliability criterion, the present reliability specifications are excessively stringent.Keywords
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