Two recent models of Schottky barrier formation are discussed. These invoke ‘‘metal‐induced gap states’’ or native defects to explain Fermi‐level pinning. Available experimental data can be satisfactorily explained by states intrinsic to the surface and interface, without postulating a defect pinning mechanism. In contrast, recent theoretical and experimental work appears to contradict the proposed defect mechanism. The connection between Schottky barriers and semiconductorheterojunction band lineups is proposed as a possible test of theory.