Structure of multiple-vacancy (oxygen) centers in irradiated silicon
- 1 April 1971
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 8 (3), 213-219
- https://doi.org/10.1080/00337577108231031
Abstract
Analysis of a new paramagnetic spin 1 spectrum, labeled Si-S1, indicates that it corresponds to the neutral charge state of the Si-B1 center in an excited spin-triplet state. An extension of this analysis to the Si-P1, -P2, -P3, -P4, and -P5 centers suggest that these centers comprise a family of defects which consist of a string of neighboring vacancies in a single (110) plane. In particular, it appears that the Si-P1 center is an odd ( 3)-vacancy defect; the Si-P2 center is a 2-vacancy, oxygen defect; the Si-P3 center is a 4-vacancy defect; the Si-P4 center is a 3-vacancy, oxygen defect of symmetry lower than C2v ; and the Si-P5 center is a 3-vacancy, oxygen defect having C2v symmetry.Keywords
This publication has 7 references indexed in Scilit:
- ELECTRON PARAMAGNETIC RESONANCE IN ION IMPLANTED SILICONApplied Physics Letters, 1969
- ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICONApplied Physics Letters, 1969
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the DivacancyPhysical Review B, 1965
- Spin-1 Centers in Neutron-Irradiated SiliconPhysical Review B, 1963
- Angular Distributions of (α, n) Reaction son Be and CJournal of the Physics Society Japan, 1963
- Electron Spin Resonance in Neutron-Irradiated SiliconPhysical Review B, 1962
- Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-CenterPhysical Review B, 1961