Designs of high performance TTL integrated circuits employing CDI component structures
- 1 January 1970
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. XIII, 116-117
- https://doi.org/10.1109/isscc.1970.1154789
Abstract
Application of collector-diffusion-isolated (CDI) device structures to high-performance TTL, to take advantage of simpler processing and reduced area requirements per gate, will be described. Modifications in basic TTL and device structures which produce propagation delays of 4 ns at a 6 mW power level will be discussed.Keywords
This publication has 6 references indexed in Scilit:
- High performance ECL gates made by CDI and conventional methodsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1969
- New, simplified, bipolar technology and its application to systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1969
- Collector diffusion isolated integrated circuitsProceedings of the IEEE, 1969
- Transistor-transistor logic with high packing density and optimum performance at high inverse gainIEEE Journal of Solid-State Circuits, 1968
- Self-isolated bipolar transistors in integrated circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1968
- Transistor-transistor logic with high packing density and optimum performance at high inverse gainPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1968