Effect of the junction interface properties on blue emission of SiC blue LEDs grown by step-controlled CVD
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4), 623-627
- https://doi.org/10.1016/0022-0248(91)90815-m
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Fabrication of SiC Blue LEDs Using Off-Oriented SubstratesJapanese Journal of Applied Physics, 1990
- Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor DepositionJapanese Journal of Applied Physics, 1987
- Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS StructureJapanese Journal of Applied Physics, 1982
- Fabrication of 6H-SiC light-emitting diodes by a rotation dipping technique: Electroluminescence mechanismsJournal of Applied Physics, 1979