The Deformable-Channel Model--A New Approach to High-Frequency MESFET Modeling
- 1 December 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 35 (12), 1199-1207
- https://doi.org/10.1109/tmtt.1987.1133838
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- A technique for evaluating sums by means of complex integrationAmerican Journal of Physics, 1982
- Design Considerations for Monolithic Microwave CircuitsIEEE Transactions on Microwave Theory and Techniques, 1981
- Feedback Effects in the GaAs MESFET Model (Letters)IEEE Transactions on Microwave Theory and Techniques, 1976
- Microwave Field-Effect Transistors - 1976IEEE Transactions on Microwave Theory and Techniques, 1976
- Equivalent Circuit of the Schottky-Barrier Field-Effect Transistor at Microwave Frequencies (Short Papers)IEEE Transactions on Microwave Theory and Techniques, 1975
- Circuit model for the GaAs m.e.s.f.e.t. valid to 12 GHzElectronics Letters, 1975
- General theory for pinched operation of the junction-gate FETSolid-State Electronics, 1969
- Equivalent circuit and gain of MOS field effect transistorsSolid-State Electronics, 1966
- A Unipolar "Field-Effect" TransistorProceedings of the IRE, 1952