Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen
- 12 December 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 51 (24), 2224-2225
- https://doi.org/10.1103/physrevlett.51.2224
Abstract
Most of the shallow acceptor levels due to boron in single-crystal silicon can be neutralized by atomic hydrogen at temperatures between 65 and 300°C. This treatment can result in a sixfold increase in resistivity.Keywords
This publication has 13 references indexed in Scilit:
- Hydrogenation induced improvement in electronic properties of heteroepitaxial silicon-on-sapphireApplied Physics Letters, 1982
- Doping effects on post-hydrogenated chemical-vapour-deposited amorphous siliconPhilosophical Magazine Part B, 1982
- The role of hydrogen in heavily doped amorphous siliconPhilosophical Magazine Part B, 1982
- Studies of the hydrogen passivation of silicon grain boundariesJournal of Applied Physics, 1981
- Photoluminescence from hydrogenated ion-implanted crystalline siliconApplied Physics Letters, 1979
- Hydrogen content and density of plasma-deposited amorphous silicon-hydrogenJournal of Applied Physics, 1979
- Photoluminescence recovery in rehydrogenated amorphous siliconApplied Physics Letters, 1978
- Hydrogenation and dehydrogenation of amorphous and crystalline siliconApplied Physics Letters, 1978
- Photoluminescence of hydrogenated amorphous siliconApplied Physics Letters, 1977
- A Spreading Resistance Technique for Resistivity Measurements on SiliconJournal of the Electrochemical Society, 1966