Field-effect transistor using a solid electrolyte as a new oxygen sensor
- 1 April 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (7), 2431-2434
- https://doi.org/10.1063/1.341038
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- The influence of different insulators on paladium-gate metal-insulator-semiconductor hydrogen sensorsIEEE Transactions on Electron Devices, 1984
- An integrated co-sensitive mos transistorSensors and Actuators, 1983
- Performance of gas-sensitive Pd-gate mosfets with SiO2 and Si3N4 gate insulatorsSensors and Actuators, 1983
- Palladium and platinum gate metal-oxide-semiconductor capacitors in hydrogen and oxygen mixturesApplied Physics Letters, 1982
- Hydrogen sensitive mos-structuresSensors and Actuators, 1981
- Study of calcia-stabilized zirconia thin-film sensorsJournal of Vacuum Science and Technology, 1977
- Electrochemical Semipermeability and the Electrode Microsystem in Solid Oxide Electrolyte CellsJournal of the Electrochemical Society, 1976
- A hydrogen-sensitive Pd-gate MOS transistorJournal of Applied Physics, 1975
- Miniaturized Electrode for On-Line PO2 MeasurementsIEEE Transactions on Biomedical Engineering, 1975
- A hydrogen−sensitive MOS field−effect transistorApplied Physics Letters, 1975