Strained-layer broad-area lasers have been grown by MOVPE. The structures contain 3.5nm-wide Ga0.3In0.7As quantum wells. They emit close to 1.5μm and have been made to lase under current injection. These structures were compared with similar lasers containing unstrained 7.0n m-wide Ga0.47In0.53As quantum wells also emitting at 1.5μ m. No improvement has been found in Jth (933 cm−2) or T0 (47 K) in the case of the strained structure, despite the expected band structure modification.