Field-Induced Photoelectron Emission from p-Type Silicon Aluminum Surface-Barrier Diodes
- 1 April 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (5), 1945-1951
- https://doi.org/10.1063/1.1659147
Abstract
The diode bias dependence and the spectral response of the external emission of photo‐induced conduction electrons have been investigated experimentally and analytically for reverse‐biased surface‐barrier diodes. An anisotropy has been observed in the diode bias dependence. Variation of the mean‐free path of hot electrons with impurity densities in silicon is suggested by comparing the experimental result with the analytical one.Keywords
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