Second-harmonic generation at 421 nm using injection-locked GaAlAs laser array and KNbO3
- 26 September 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (13), 1170-1171
- https://doi.org/10.1063/1.100012
Abstract
Significant improvement in frequency doubling efficiency of a cw output of a GaAlAs laser diode is described. Up to 0.72 mW of 421 nm power was generated by illuminating a KNbO3 crystal with a 270 mW diffraction‐limited beam generated by an externally injection‐locked laser diode array, operating in a single‐mode and single‐far‐field lobe.Keywords
This publication has 4 references indexed in Scilit:
- Single lobe operation of a 40-element laser array in an external ring laser cavityApplied Physics Letters, 1987
- Injection locking and single-mode fiber coupling of a 40-element laser diode arrayApplied Physics Letters, 1987
- Nonlinear Optical Effects In KNbO 3 Crystals At Al x Ga 1 _ x As, Dye, Ruby And Nd:YAG Laser Wavelengths.Published by SPIE-Intl Soc Optical Eng ,1985
- High efficiency second-harmonic generation in KNbO3 crystalsOptics Communications, 1983