Atomic mixing effects on high fluence Ge implantation into Si at 40 keV
- 15 March 1982
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 194 (1-3), 449-451
- https://doi.org/10.1016/0029-554x(82)90562-6
Abstract
No abstract availableKeywords
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- Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92, E(4He) = 400–4000 keVAtomic Data and Nuclear Data Tables, 1974