Ultra-fine grain reconfigurability using CNTFETs

1 December 2007

conference paper
conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 194-197
https://doi.org/10.1109/icecs.2007.4510963

Abstract

This paper describes a family of novel dynamically reconfigurable logic gates with double-gate carbon nanotube field-effect transistors (DG-CNTFET). The design is based on a property specific to this device: ambivalence, enabling p-type or n-type behavior depending on the back-gate voltage. Through simulations using available models, these gates and a 10-function ALU offering fine-grain reconfigurability are shown to operate at 20 GHz.

Keywords

This publication has 3 references indexed in Scilit:

An 8-GHz f/sub t/ carbon nanotube field-effect transistor for gigahertz range applications
IEEE Electron Device Letters, 2006
Analysis of CNTFET physical compact model
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2006
High-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities
IEEE Transactions on Nanotechnology, 2005

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