An 8-GHz f/sub t/ carbon nanotube field-effect transistor for gigahertz range applications
- 24 July 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 27 (8), 681-683
- https://doi.org/10.1109/led.2006.879042
Abstract
In this letter, the authors report on the high-frequency (HF) performance of self-assembled carbon nanotube field-effect transistors. HF device structures including a large number of single-wall carbon nanotubes have been designed and optimized in order to establish a new state of the art. The device exhibits a current gain (|H21| 2) cutoff frequency (ft) of 8 GHz and a maximum stable gain value of 10 dB at 1 GHz, after de-embedding the access pads. Considering such results, nanotube-based circuits with gigahertz performance are now conceivableKeywords
This publication has 11 references indexed in Scilit:
- Active properties of carbon nanotube field-effect transistors deduced from S parameters measurementsIEEE Transactions on Nanotechnology, 2006
- Microwave nanotube transistor operation at high biasApplied Physics Letters, 2006
- Mixing at 50GHz using a single-walled carbon nanotube transistorApplied Physics Letters, 2005
- A Poly-Si Gate Carbon Nanotube Field Effect Transistor for High Frequency ApplicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Chemical Optimization of Self-Assembled Carbon Nanotube TransistorsNano Letters, 2005
- Direct measurements of frequency response of carbon nanotube field effect transistorsElectronics Letters, 2005
- AC performance of nanoelectronics: towards a ballistic THz nanotube transistorSolid-State Electronics, 2004
- Frequency Response of Top-Gated Carbon Nanotube Field-Effect TransistorsIEEE Transactions on Nanotechnology, 2004
- Carbon Nanotube Transistor Operation at 2.6 GHzNano Letters, 2004
- High-Frequency Response in Carbon Nanotube Field-Effect TransistorsIEEE Electron Device Letters, 2004