Compatible High and Low Voltage CMOS Devices Using SIMOX Technology

Abstract
New type high and low voltage CMOS buried channel devices are described, which are applied to a current mirror and an operational amplifier using SIMOX technology. In the MOS current mirrors, a 0.5% matching error rate was obtained in a 10 µA drain current without any compensation circuits. In the two stage operational amplifier, an open loop voltage gain of 60 dB was obtained with a ±5 V supply.