Hot-carrier relaxation in photoexcited In0.53Ga0.47As
- 1 September 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (5), 475-477
- https://doi.org/10.1063/1.91736
Abstract
Photoluminescence spectra of In0.53Ga0.47As reveal the presence of hot carriers with effective temperatures as high as Tc ∼600 K. Variation of carrier temperature with excitation intensity identifies the LO phonon emission process as the dominant carrier cooling mechanism with h/ωLO=34 meV. Comparison with GaAs yields a hot‐carrier energy loss rate a factor of 3 smaller for the less polar In0.53Ga0.47As.Keywords
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