Novel SiO/sub 2/AlN/HfAlO/IrO/sub 2/ memory with fast erase, large ΔV/sub TH/ and good retention
- 27 July 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 210-211
- https://doi.org/10.1109/.2005.1469271
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- A novel program-erasable capacitor using high-κ AlN dielectricPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Sub-40nm tri-gate charge trapping nonvolatile memory cells for high-density applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004