Spectroscopic Study on Sputtering of PLZT Thin Film

Abstract

An optimization of RF sputtering condition for preparation of high-quality PLZT thin film has been studied by use of spectroscopic analysis of vapor phase species and composition for deposited PLZT thin film. Relative amounts of the component elements in the sputtering vapor have been measured from optical emission spectra of the plasma. Distributions of the elements perpendicular to the surface in the deposited films have been obtained by use of ESCA. Results of the systematic analysis imply that fine control of Pb content is the key issue for higher quality film. PLZT films having a large dielectric constant of 5000 have been obtained under the sputtering condition of low RF power.