Abstract
CuGaSe2 and CdGeAs2 crystallize in the chalcopyrite‐type structure. The lattice constants of tetragonal CuGaSe2 are a = 5.5963 ± 0.0001 and c = 11.0036 ± 0.0002 Å at 298 °K, those of CdGeAs2 are a = 5.9432 ± 0.0001 and c = 11.2163 ± 0.0003 Å at 298°K. The space group is I4̄2d with four formulas in a unit cell. 1747 reflections were measured with PEXRAD for CuGaSe2 and 1892 for CdGeAs2 using MoKα x radiation. Least squares refinement of the structural parameters using 149 symmetry‐independent CuGaSe2 and 300 CdGeAs2 structure factors led to final agreement factors of 0.035 and 0.038, respectively. CuGaSe2 is slightly Cu deficient: the value of the x coordinate in the final model is 0.2431 ± 0.0002, with considerable vibrational anisotropy. CdGeAs2 is stoichiometric: the final model has x = 0.2785 ± 0.0002, also with significant vibrational anisotropy, but less than that in CuGaSe2. The two compounds confirm the pattern of sublattice distortion in AIBIIIC2VI and AIIBIVC2V chalcopyrites previously found. The closest Cu–Se distance is 2.385 Å, Ga–Se is 2.435 Å, Cd–As is 2.629 Å and Ge–As is 2.430 Å, all ± 0.001 Å. The effective Debye characteristic temperatures are simply related to the reported microhardnesses of the chalcopyrites.