Determination of the depth distribution of implanted helium atoms in niobium by Rutherford backscattering
- 1 December 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (11), 643-644
- https://doi.org/10.1063/1.1655342
Abstract
Using Bragg's rule of additivity of the stopping powers in compounds and the Rutherford backscattering technique to determine electronic stopping powers, the depth distribution of 4‐keV helium ions implanted in niobium was determined for different implantation temperatures.Keywords
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