Growth of self-assembled homogeneous SiGe-dots on Si(100)
- 1 February 1997
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 294 (1-2), 291-295
- https://doi.org/10.1016/s0040-6090(96)09248-6
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Growth and characterization of self-assembled Ge-rich islands on SiSemiconductor Science and Technology, 1996
- Self-organized MBE growth of Ge-rich SiGe dots on Si(100)Journal of Crystal Growth, 1995
- Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)Applied Physics Letters, 1995
- Radiative recombination in type-II GaSb/GaAs quantum dotsApplied Physics Letters, 1995
- Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopyApplied Physics Letters, 1995
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1993
- Dimensionality and critical sizes of GeSi on Si(100)Thin Solid Films, 1992
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990