Growth of high quality InP with metal organic molecular beam epitaxy

1 January 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (3), 213-214
https://doi.org/10.1049/el:19900143

Abstract

In this letter we report on the growth of high quality InP by metal organic molecular beam epitaxy (MOMBE). InP layers were grown exhibiting Hall mobilities of up to 132000 cm2/Vs at T = 77 K with a background free electron concentration of around 2 × 1014cm−3. These good electrical results were obtained along with a high optical quality.

Keywords

HIGH OPTICAL QUALITY
HALL MOBILITIES
MOMBE
BACKGROUND FREE ELECTRON CONCENTRATION
HIGH QUALITY LAYERS
INP
SEMICONDUCTOR GROWTH
METAL ORGANIC MOLECULAR BEAM EPITAXY

This publication has 1 reference indexed in Scilit:

Chemical Beam Epitaxy
Published by Elsevier ,1989

Cited by 11 articles