ZnxCd1−xS films for use in heterojunction solar cells

Abstract
ZnxCd1−xS films suitable for use in solar cells have been formed by simultaneous evaporating of ZnS and CdS. Lattice parameter and band gap are found to change almost linearly with composition. Electrical resistivity increases from 10Ω cm as x increases from 0 to 1. Nonseries‐resistance‐limited ZnxCd1−xS‐CuyS photovoltaic cells have exhibited open‐circuit voltages greater than 0.7 V, apparently due to a better match between the ZnxCd1−xS and CuyS electron affinities.

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