Room-temperature continuous operation of photopumped MO-CVD AlxGa1−xAs-GaAs-AlxGa1−xAs quantum-well lasers

Abstract
Room‐temperature continuous operation (cw, 300 °K) of photopumped AlxGa1−xAs‐GaAs‐AlxGa1−xAs quantum‐well heterostructure lasers embedded in Cu under diamond windows is demonstrated. The quantum‐well heterostructures are grown by metalorganic chemical vapor deposition (MO‐CVD) and possess undoped (ndna≲1015/cm3) or compensated (nZn∼1019/cm3, nSe∼8×1018/cm3) GaAs active layers of thickness Lz∼200 Å.

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