Diffusion lengths in amphoteric GaAs heteroface solar cells
- 15 March 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (6), 375-376
- https://doi.org/10.1063/1.90051
Abstract
Minority‐carrier diffusion lengths in amphoteric GaAs : Si were investigated. Electron and hole diffusion lengths in p and n type respectively were determined to be Ln=13 μm and Lp=7 μm. Preliminary efficiency measurements on heteroface structures based on amphoteric GaAs : Si p‐n junctions indicated that these devices should make excellent solar cells.Keywords
This publication has 2 references indexed in Scilit:
- Ga[sub 1−x]Al[sub x]As-GaAs P-P-N Heterojunction Solar CellsJournal of the Electrochemical Society, 1973
- Optical microprobe response of GaAs diodesIEEE Transactions on Electron Devices, 1967