Tl-doped p-type layer of ZnSe
- 30 September 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 59 (1-2), 196-200
- https://doi.org/10.1016/0022-0248(82)90324-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Some characteristics of the formation of high conductivity P-layers in ZnSe and ZnSxSe1-xJournal of Electronic Materials, 1976
- p-n junction zinc sulfo-selenide and zinc selenide light-emitting diodesApplied Physics Letters, 1975
- Theory of Isothermal Currents and the Direct Determination of Trap Parameters in Semiconductors and Insulators Containing Arbitrary Trap DistributionsPhysical Review B, 1973
- The evaluation of electron trapping parameters from conductivity glow curves in cadmium sulphideBritish Journal of Applied Physics, 1964
- A New Semiconductor Photocell Using Lateral PhotoeffectProceedings of the IRE, 1957
- Diffusion of Donor and Acceptor Elements in SiliconJournal of Applied Physics, 1956