Far-infrared study of impurity local modes in gallium-doped PbTe
- 31 December 1999
- journal article
- Published by Elsevier in Infrared Physics & Technology
- Vol. 40 (6), 453-462
- https://doi.org/10.1016/s1350-4495(99)00035-3
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Carrier Transport and Non-Equilibrium Phenomena in Doped PbTe and Related MaterialsPhysica Status Solidi (a), 1993
- Lead telluride-based photodetectors: a new approachSemiconductor Science and Technology, 1993
- Low-temperature far-infrared study of localized states in In-doped Pb0.75Sn0.25Te single crystalsJournal of Physics: Condensed Matter, 1992
- Deep and resonance states in AIV BVI semiconductorsUspekhi Fizicheskih Nauk, 1985
- Far-infrared reflectivity of indium doped Pb1−xSnxTeSolid State Communications, 1984
- Doping of PbTe with Group-III elements: An ionic lattice approachPhysical Review B, 1981
- Mechanism of strong resonant 1LO Raman scatteringSolid State Communications, 1976
- Plasmon-phonon coupling in GaAsSolid State Communications, 1973
- Applications of Lead ChalcogenidesPublished by Springer Nature ,1970
- The crystal dynamics of lead tellurideProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1966