Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11\bar22) InGaN Multiple Quantum Well Laser Diode Structures
- 5 September 2008
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 1 (9), 091103
- https://doi.org/10.1143/apex.1.091103
Abstract
Stimulated emission (SE) in the blue-green (480 nm) and green (514 nm) regime has been observed, at room temperature (RT) under optical pumping, from nonpolar m-plane (1010) and semipolar (1122) InGaN multi-quantum well (MQW) laser diode (LD) structures, respectively, grown on bulk GaN substrates. The emission intensity exhibited a clear threshold behavior with respect to the pump power. Optical anisotropy was also observed between the two perpendicular in-plane directions [1123] and [1010] for semipolar LD structures, with significantly lower pump thresholds for emission along [1123]. The SE wavelength, measured just above threshold, was blue-shifted with respect to the spontaneous emission wavelength measured just below threshold. These initial results indicate that semipolar (1122) GaN is a promising orientation for the realization of blue-green and green LDs.Keywords
This publication has 18 references indexed in Scilit:
- Characteristics of long wavelength InGaN quantum well laser diodesApplied Physics Letters, 2008
- Continuous-Wave Operation of Blue Laser Diodes Based on Nonpolarm-Plane Gallium NitrideApplied Physics Express, 2007
- Pure Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride with InGaN Waveguiding LayersJapanese Journal of Applied Physics, 2007
- Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN SubstratesJapanese Journal of Applied Physics, 2007
- Gain suppression phenomena observed in InxGa1−xN quantum well laser diodes emitting at 470nmApplied Physics Letters, 2006
- Suppression mechanism of optical gain formation in InxGa1−xN quantum well structures due to localized carriersSolid State Communications, 2006
- Influence of internal fields on gain and spontaneous emission in InGaN quantum wellsApplied Physics Letters, 2006
- Recent progress in high-power blue-violet lasersIEEE Journal of Selected Topics in Quantum Electronics, 2003
- 100-mW kink-free blue-violet laser diodes with low aspect ratioIEEE Journal of Quantum Electronics, 2003
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996