MESFET nonlinearities applied to predistortion linearizer design
- 2 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Three different circuit topologies of predistortion linearizers are proposed using MESFETs biased at low drain bias. The design of a C-band linearizer using two 1- mu -gate-length devices is detailed, and the achieved results compare favorably with conventional designs which use Schottky diodes. The linearizer reduced by 10 dB the intermodulation products of a 10-W power amplifier operating at 6 GHz, and up to 4-dB back-off.> Author(s) Tupynamba, R.C. Lab. de Microelectronica, Sao Paulo Univ., Brazil Camargo, E.Keywords
This publication has 3 references indexed in Scilit:
- Quasi Pinch-Off GaAs FET Linearizer for Microwave SSPAsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1991
- Novel linearizer using balanced circulators and its application to multilevel digital radio systemsIEEE Transactions on Microwave Theory and Techniques, 1989
- Cuber predistortion linearizer for relay equipment in 800 MHz band land mobile telephone systemIEEE Transactions on Vehicular Technology, 1985