Effect of stress relaxation on the generation of radiation-induced interface traps in post-metal-annealed Al-SiO2-Si devices
- 1 August 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (3), 249-251
- https://doi.org/10.1063/1.95200
Abstract
We have found experimentally that both the interfacial stress distribution and the generation of interface traps in an Al‐SiO2‐Si structure change systematically with time lapse between post‐metal‐anneal treatment and x‐ray irradiation, and strong correlation between the two is established. The results suggest that the device radiation sensitivity is modulated by the interfacial stress and/or the oxide bond strain gradient. Two possible mechanisms based on the variations of the interfacial strained bonds are proposed to explain the results.Keywords
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