Formation of interface traps in MOSFETs during annealing following low temperature irradiation
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 35 (6), 1234-1240
- https://doi.org/10.1109/23.25445
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
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