Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer
- 15 September 2003
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 94 (6), 4225-4227
- https://doi.org/10.1063/1.1604475
Abstract
We have investigated nonalloyed Al/Pt ohmic contacts on n -type ZnO:Al (n d =2.0×10 18 cm −3 ). It is shown that the as-deposited Al/Pt contacts produce a specific contact resistivity of 1.2×10 −5 Ω cm 2 . Auger electron spectroscopy and x-ray photoelectron spectroscopy depth profile results show interdiffusion between oxygen and aluminum, resulting in an increase of carrier concentrations near the ZnO surface. The increase of the carrier concentration at the surface region of ZnO is attributed to the low resistance of the nonalloyed Al/Pt contact.Keywords
This publication has 18 references indexed in Scilit:
- Thermally Stable and Low Resistance Ru Ohmic Contacts to n-ZnOJapanese Journal of Applied Physics, 2002
- Control of p- and n-type conductivity in sputter deposition of undoped ZnOApplied Physics Letters, 2002
- ZnO Schottky ultraviolet photodetectorsJournal of Crystal Growth, 2001
- Electrical and Structural Properties of Ti/Au Ohmic Contacts to n-ZnOJournal of the Electrochemical Society, 2001
- Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layersApplied Physics Letters, 2000
- Current injection emission from a transparent p–n junction composed of p-SrCu2O2/n-ZnOApplied Physics Letters, 2000
- ZnO diode fabricated by excimer-laser dopingApplied Physics Letters, 2000
- The grain size effects on the photoluminescence of ZnO/α-Al2O3 grown by radio-frequency magnetron sputteringJournal of Applied Physics, 2000
- Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin filmsApplied Physics Letters, 1998
- Will UV Lasers Beat the Blues?Science, 1997