Physical properties of non-pyrophoric group III precursors for MOVPE
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4), 309-313
- https://doi.org/10.1016/0022-0248(91)90475-k
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- MOCVD of AlGaAs/GaAs with novel group III compoundsJournal of Electronic Materials, 1990
- Novel intramolecularly stabilized organogallium and organoindium compounds and their use in MOVPEPolyhedron, 1990
- Novel organometallic starting materials for group III–V semiconductor metal-organic chemical vapour depositionThin Solid Films, 1989
- Growth of indium phosphide by metalorganic vapor phase epitaxy using dimethyl (3-dimethylaminopropyl) indium as a new indium sourceApplied Physics Letters, 1989